Why Review the NCE Super Junction

NCE Power built its business on power MOSFETs, and its Super Junction family is the high-voltage expression of that expertise. The datasheet promises low on-resistance, low gate charge and an enhanced body-diode recovery, but the datasheet only tells part of the story. This review examines the NCE Super Junction MOSFETs from the perspective of an FAE who supports customers through design-in and bring-up, focusing on on-resistance, body-diode behavior, packaging and practical layout.

On-Resistance and Charge Balance

A Super Junction MOSFET uses a charge-balance structure to lower on-resistance sharply for a given voltage, so a 600 V or 650 V switch conducts with much less loss than a conventional planar device. On evaluation hardware, the measured on-resistance tracked the datasheet, and the low gate charge was evident in the clean gate waveforms and the low drive power. The practical result is that a PFC stage can run at high frequency with a small inductor and low conduction loss, which is exactly what an offline supply needs.

On-Resistance over Temperature

On-resistance rises with temperature, so the hot value determines the cooling. The NCE Super Junction family showed a predictable rise, which lets the designer estimate conduction loss with confidence. As always, use the hot value, not the 25 C figure, and confirm the estimate on the bench.

Body-Diode Recovery

The standout feature of the SJ-III TF series is its enhanced body-diode recovery. In a full-bridge, half-bridge or LLC converter, the body diode conducts during the dead time, and a conventional super-junction body diode can produce reverse-recovery loss and ringing. In our tests, the SJ-III TF devices produced less recovery loss and cleaner waveforms than a standard super-junction device, which translated into higher efficiency and simpler EMC. For a resonant or bridge design, that is a real advantage, not a footnote.

Gate Charge and Drive

A low gate charge keeps the drive power small and the switching fast. The devices worked well with a conventional gate driver and a moderate gate resistor, and the internal gate resistance was consistent across parts. For a high-frequency supply, the low gate charge is what allows the switching frequency to rise without an excessive drive loss.

Packaging and Thermal Path

NCE offers the Super Junction family in a wide range of packages, from the surface-mount TO-252 and TO-263 to the through-hole TO-220F, TO-220 and TO-247. The choice follows the power and the cooling: a high-power stage mounts a TO-247 on a heatsink, while a compact stage uses a surface-mount part with the thermal path through the PCB copper and thermal vias. In our tests, case temperature rose predictably with load once the interface was correct, which is what the hot-value estimate predicts.

Insulated Packages

An insulated package such as the TO-220F simplifies mounting on a common heatsink, while a non-insulated TO-247 needs an insulating washer if several devices share a heatsink. The designer should account for the extra thermal resistance of the washer in the thermal calculation.

Applications

The NCE Super Junction family fits power-factor correction, switch-mode supplies, UPS, PC power, telecom power and LED lighting. Its combination of low on-resistance, low gate charge and enhanced body-diode recovery makes it a strong default for offline power conversion. Where the frequency is lower and the current higher, an NCE Trench FS IGBT is the natural companion, and where the voltage is low, an SGT MOSFET covers the output stage.

Solar and Drives

In a solar inverter, the Super Junction MOSFET handles the boost and bridge stages with low loss, and in a low-voltage motor drive the SGT family takes over. The two families cover the two ends of the power-conversion spectrum, which is convenient for a designer building a range of products.

Layout Practice

The NCE Super Junction family rewards a disciplined layout. Keep the DC-link capacitor close to the device with a low-inductance connection, size the gate resistor to control the edges within the EMI budget, and measure overshoot at the device terminals rather than at the bus. In our tests, a tight loop and a moderate gate resistor produced clean waveforms with comfortable margin, and the enhanced body diode kept the bridge stage quiet.

Conclusion

The NCE Power Super Junction MOSFETs deliver on their promises: low on-resistance, low gate charge and an enhanced body-diode recovery that matters in real bridge converters. In our evaluation they were straightforward to design in and reliable on the bench. For new offline power designs, they deserve to be on the shortlist, and BeiLuo's authorized stock and FAE support make evaluation easy.